Journal article
IEEE Journal of Microwaves, vol. 5, 2025, pp. 1293-1307
APA
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Kniss, C., Sharma, A., Phon, R., Shimonov, G., Socher, E., Shrestha, P. R., … Kim, R. (2025). Temperature-Compensated Multi-Level CMOS Modulators Operating From 10 K to 300 K for Cryogenic Interconnects. IEEE Journal of Microwaves, 5, 1293–1307. https://doi.org/10.1109/JMW.2025.3614209
Chicago/Turabian
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Kniss, Christopher, Abhishek Sharma, Ratanak Phon, Gregory Shimonov, Eran Socher, Pragya R. Shrestha, Karthick Ramu, et al. “Temperature-Compensated Multi-Level CMOS Modulators Operating From 10 K to 300 K for Cryogenic Interconnects.” IEEE Journal of Microwaves 5 (2025): 1293–1307.
MLA
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Kniss, Christopher, et al. “Temperature-Compensated Multi-Level CMOS Modulators Operating From 10 K to 300 K for Cryogenic Interconnects.” IEEE Journal of Microwaves, vol. 5, 2025, pp. 1293–307, doi:10.1109/JMW.2025.3614209.
BibTeX Click to copy
@article{kniss2025a,
title = {Temperature-Compensated Multi-Level CMOS Modulators Operating From 10 K to 300 K for Cryogenic Interconnects},
year = {2025},
journal = {IEEE Journal of Microwaves},
pages = {1293-1307},
volume = {5},
doi = {10.1109/JMW.2025.3614209},
author = {Kniss, Christopher and Sharma, Abhishek and Phon, Ratanak and Shimonov, Gregory and Socher, Eran and Shrestha, Pragya R. and Ramu, Karthick and Campbell, Jason P. and Kakhki, Amin Pourvali and Hadi, Richard Al and Kim, Rod}
}